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SiC MOSFETs
N-channel silicon carbide MOSFETs. On-resistance is shown at 18 V gate drive with the test current. Absolute maximum gate voltage is a stress limit; consult the operating drive range and switching conditions separately before selecting a gate driver.
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SiC MOSFETs
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| COMPARE | PART NUMBER | PACKAGE | Drain-source voltage (VDS)(V) | Continuous drain current (ID)(A) | RDS(on) at 18 V, max(mΩ) | Gate-source voltage rating (VGS)(V) | Power dissipation (PD)(W) | Junction temperature range(°C) | DATASHEET |
|---|---|---|---|---|---|---|---|---|---|
| NCH120R123PT4 SiC MOSFETs | TO-247-4L | 1200MaximumConditionsDrain-source absolute maximum rating. | 156RatingConditionsContinuous drain current at TA = 25 °C as printed. Pulse width is limited by junction temperature; consult thermal and safe operating limits. | 16MaximumConditionsVGS = 18 V; ID = 70 A; TJ = 25 °C. Test condition, not a recommended gate-drive setting. | -10 to 22RangeConditionsGate-source absolute maximum rating. This differs from the operating gate-drive range. | 577MaximumConditionsMaximum power dissipation; TA = 25 °C as printed; consult thermal derating. | -55 to 175RangeConditionsOperating junction temperature range. | ||
| NCH80R060H SiC MOSFETs | ITO-220AB | 800MaximumConditionsDrain-source absolute maximum rating. | 37RatingConditionsContinuous drain current at TA = 25 °C as printed. Pulse width is limited by junction temperature; consult thermal and safe operating limits. | 80MaximumConditionsVGS = 18 V; ID = 16.5 A; TJ = 25 °C. Test condition, not a recommended gate-drive setting. | -10 to 22RangeConditionsGate-source absolute maximum rating. This differs from the operating gate-drive range. | 115MaximumConditionsMaximum power dissipation; TA = 25 °C as printed; consult thermal derating. | -55 to 175RangeConditionsOperating junction temperature range. | ||
| NCH75R130S SiC MOSFETs | TO-252 | 750MaximumConditionsDrain-source absolute maximum rating. | 19.5RatingConditionsContinuous drain current at TA = 25 °C as printed. Pulse width is limited by junction temperature; consult thermal and safe operating limits. | 160MaximumConditionsVGS = 18 V; ID = 11.3 A; TJ = 25 °C. Test condition, not a recommended gate-drive setting. | -10 to 22RangeConditionsGate-source absolute maximum rating. This differs from the operating gate-drive range. | 76MaximumConditionsMaximum power dissipation; TA = 25 °C as printed; consult thermal derating. | -55 to 175RangeConditionsOperating junction temperature range. | ||
| NCH75R130F SiC MOSFETs | TO-220FP | 750MaximumConditionsDrain-source absolute maximum rating. | 19.5RatingConditionsContinuous drain current at TA = 25 °C as printed. Pulse width is limited by junction temperature; consult thermal and safe operating limits. | 160MaximumConditionsVGS = 18 V; ID = 11.3 A; TJ = 25 °C. Test condition, not a recommended gate-drive setting. | -10 to 22RangeConditionsGate-source absolute maximum rating. This differs from the operating gate-drive range. | 82MaximumConditionsMaximum power dissipation; TA = 25 °C as printed; consult thermal derating. | -55 to 175RangeConditionsOperating junction temperature range. | ||
| NCH75R060PT SiC MOSFETs | TO-247 | 750MaximumConditionsDrain-source absolute maximum rating. | 58RatingConditionsContinuous drain current at TA = 25 °C as printed. Pulse width is limited by junction temperature; consult thermal and safe operating limits. | 100MaximumConditionsVGS = 18 V; ID = 13.2 A; TJ = 25 °C. Test condition, not a recommended gate-drive setting. | -10 to 25RangeConditionsGate-source absolute maximum rating. This differs from the operating gate-drive range. | 254MaximumConditionsMaximum power dissipation; TA = 25 °C as printed; consult thermal derating. | -55 to 175RangeConditionsOperating junction temperature range. |
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