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Silicon carbide
Explore SiC Schottky diodes and MOSFETs with their voltage, current, conduction and gate-drive conditions.
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5 productsSiC diodes
Silicon carbide Schottky rectifier diodes. Average forward current is presented at TC = 150 °C for these samples. Surge waveform and forward-voltage test current are retained alongside the values for engineering comparison.
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5 productsSiC MOSFETs
N-channel silicon carbide MOSFETs. On-resistance is shown at 18 V gate drive with the test current. Absolute maximum gate voltage is a stress limit; consult the operating drive range and switching conditions separately before selecting a gate driver.
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