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SiC diodes

Silicon carbide Schottky rectifier diodes. Average forward current is presented at TC = 150 °C for these samples. Surge waveform and forward-voltage test current are retained alongside the values for engineering comparison.

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SiC diodes

SiC diodes

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SiC diodes specifications, including test conditions and datasheet downloads.
COMPARE	PART NUMBER	PACKAGE	Repetitive peak reverse voltage(V)	Average rectified output current(A)	Forward voltage per diode(V)	Non-repetitive surge current(A)	Reverse leakage current(µA)	Junction temperature range(°C)	DATASHEET
	NCD20A65P SiC diodes	TO-247AC	650Maximum Conditions Maximum repetitive peak reverse voltage.	20Maximum Conditions Average rectified current; TC = 150 °C.	1.65Maximum Conditions IF = 20 A; TA = 25 °C.	130Maximum Conditions 10 ms half-sine surge; TC = 25 °C.	60Maximum Conditions VR = VRRM; TA = 25 °C.	-55 to 175Range Conditions Operating junction temperature range.	PDF
	NCD10A65S SiC diodes	TO-252	650Maximum Conditions Maximum repetitive peak reverse voltage.	10Maximum Conditions Average rectified current; TC = 150 °C.	1.65Maximum Conditions IF = 10 A; TA = 25 °C.	70Maximum Conditions 10 ms half-sine surge; TC = 25 °C.	40Maximum Conditions VR = VRRM; TA = 25 °C.	-55 to 175Range Conditions Operating junction temperature range.	PDF
	NCD6A65P8 SiC diodes	PDFN8*8	650Maximum Conditions Maximum repetitive peak reverse voltage.	6Maximum Conditions Average rectified current; TC = 150 °C.	1.65Maximum Conditions IF = 6 A; TA = 25 °C.	48Maximum Conditions 8.3 ms half-sine surge; superimposed on rated load; TA = 25 °C unless otherwise specified.	25Maximum Conditions VR = VRRM; TA = 25 °C.	-55 to 175Range Conditions Operating junction temperature range.	PDF
	NCD6A65P5 SiC diodes	PDFN5*6	650Maximum Conditions Maximum repetitive peak reverse voltage.	6Maximum Conditions Average rectified current; TC = 150 °C.	1.65Maximum Conditions IF = 6 A; TA = 25 °C.	48Maximum Conditions 10 ms half-sine surge; TC = 25 °C.	50Maximum Conditions VR = VRRM; TA = 25 °C.	-55 to 175Range Conditions Operating junction temperature range.	PDF
	NCD4A65 SiC diodes	TO-220AC	650Maximum Conditions Maximum repetitive peak reverse voltage.	4Maximum Conditions Average rectified current; TC = 150 °C.	1.65Maximum Conditions IF = 4 A; TA = 25 °C.	31Maximum Conditions 10 ms half-sine surge; TC = 25 °C.	15Maximum Conditions VR = VRRM; TA = 25 °C.	-55 to 175Range Conditions Operating junction temperature range.	PDF

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