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Small-signal bipolar transistors

Small-signal NPN and PNP transistors for switching and amplification tasks. Compare signed voltage and current ratings, DC gain at its stated collector current, saturation voltage and package dissipation.

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Small-signal bipolar transistors

Small-signal bipolar transistors

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Small-signal bipolar transistors specifications, including test conditions and datasheet downloads.
COMPARE	PART NUMBER	PACKAGE	Polarity	Collector-emitter voltage, VCEO(V)	Continuous collector current, IC(A)	Power dissipation (PD)(W)	DC current gain, hFE	Collector-emitter saturation voltage(V)	DATASHEET
	BC856A Small-signal bipolar transistors	SOT-23	PNP Conditions Device heading and bipolar connection diagram.	-65Rating Conditions Collector-emitter absolute maximum rating; TA = 25 °C.	-0.1Rating Conditions Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.	0.2Maximum Conditions TA = 25 °C; power rating converted from mW to W. Consult mounting and thermal derating.	125 to 250Range Conditions VCE = -5 V; IC = -2 mA; TA = 25 °C.	-0.5Maximum Conditions IC = -100 mA; IB = -5 mA; TA = 25 °C. Signed value retained.	PDF
	MMBT3906 Small-signal bipolar transistors	SOT-23	PNP Conditions Device heading and bipolar connection diagram.	-40Rating Conditions Collector-emitter absolute maximum rating; TA = 25 °C.	-0.2Rating Conditions Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.	0.2Maximum Conditions TA = 25 °C; power rating converted from mW to W. Consult mounting and thermal derating.	100 to 300Range Conditions VCE = -1 V; IC = -10 mA; TA = 25 °C.	-0.25Maximum Conditions IC = -10 mA; IB = -1 mA; TA = 25 °C. Signed value retained.	PDF
	MMBT3904 Small-signal bipolar transistors	SOT-23	NPN Conditions Device heading and bipolar connection diagram.	40Rating Conditions Collector-emitter absolute maximum rating; TA = 25 °C.	0.2Rating Conditions Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.	0.2Maximum Conditions TA = 25 °C; power rating converted from mW to W. Consult mounting and thermal derating.	100 to 300Range Conditions VCE = 1 V; IC = 10 mA; TA = 25 °C.	0.2Maximum Conditions IC = 10 mA; IB = 1 mA; TA = 25 °C. Signed value retained.	PDF
	NH5551KW Small-signal bipolar transistors	SOT-323	NPN Conditions Device heading and bipolar connection diagram.	160Rating Conditions Collector-emitter absolute maximum rating; TA = 25 °C.	0.6Rating Conditions Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.	0.2Maximum Conditions TA = 25 °C; power rating converted from mW to W. Consult mounting and thermal derating.	100 to 300Range Conditions VCE = 5 V; IC = 10 mA; TA = 25 °C.	0.15Maximum Conditions IC = 10 mA; IB = 1 mA; TA = 25 °C. Signed value retained.	PDF
	MMBT2907A Small-signal bipolar transistors	SOT-23	PNP Conditions Device heading and bipolar connection diagram.	-60Rating Conditions Collector-emitter absolute maximum rating; TA = 25 °C.	-0.6Rating Conditions Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.	0.3Maximum Conditions TA = 25 °C; power rating converted from mW to W. Consult mounting and thermal derating.	100 to 300Range Conditions VCE = -10 V; IC = -150 mA; TA = 25 °C.	-0.4Maximum Conditions IC = -150 mA; IB = -15 mA; TA = 25 °C. Signed value retained.	PDF

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