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Complementary MOSFETs
N-channel and P-channel MOSFETs in one common-drain package. Each channel has its own signed voltage and current ratings, on-resistance and test conditions. Compare the two channels separately.
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Complementary MOSFETs
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| COMPARE | PART NUMBER | PACKAGE | MOSFET configuration | VDS, N-channel(V) | VDS, P-channel(V) | ID, N-channel(A) | ID, P-channel(A) | RDS(on), N-channel at 10 V, max(mΩ) | RDS(on), P-channel at -10 V, max(mΩ) | DATASHEET |
|---|---|---|---|---|---|---|---|---|---|---|
| NTS3012T03S4 Complementary MOSFETs | TO-252-4L | N-channel + P-channel, common drainConditionsN- and P-channel MOSFETs share the drain connection shown on p. 1. | 30RatingConditionsN-channel absolute maximum drain-source voltage. | -30RatingConditionsP-channel absolute maximum drain-source voltage; negative sign retained. | 38RatingConditionsN-channel continuous drain current; TA = 25 °C as printed; see thermal limits. | -18RatingConditionsP-channel continuous drain current; TA = 25 °C as printed; see thermal limits. | 16MaximumConditionsN-channel; VGS = 10 V; ID = 19 A; TA = 25 °C. | 38MaximumConditionsP-channel; VGS = -10 V; ID = -9 A; TA = 25 °C. | ||
| NTS2216T03S4 Complementary MOSFETs | TO-252-4L | N-channel + P-channel, common drainConditionsN- and P-channel MOSFETs share the drain connection shown on p. 1. | 30RatingConditionsN-channel absolute maximum drain-source voltage. | -30RatingConditionsP-channel absolute maximum drain-source voltage; negative sign retained. | 29RatingConditionsN-channel continuous drain current; TA = 25 °C as printed; see thermal limits. | -24RatingConditionsP-channel continuous drain current; TA = 25 °C as printed; see thermal limits. | 21MaximumConditionsN-channel; VGS = 10 V; ID = 14 A; TA = 25 °C. | 30MaximumConditionsP-channel; VGS = -10 V; ID = -12 A; TA = 25 °C. |
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