
TO-252-4L
NTS3012T03S4Complementary 30 V N-channel and -30 V P-channel MOSFETs in a common-drain TO-252-4L package. Separate electrical limits and on-resistance values are provided for both channels.

TO-252-4L · Datasheet illustration
Complementary MOSFETs
Complementary 30 V N-channel and -30 V P-channel MOSFETs in a common-drain TO-252-4L package. Separate electrical limits and on-resistance values are provided for both channels.
MOSFET configuration
N-channel + P-channel, common drain
N- and P-channel MOSFETs share the drain connection shown on p. 1.
VDS, N-channel
30 V
Rating
N-channel absolute maximum drain-source voltage.
VDS, P-channel
-30 V
Rating
P-channel absolute maximum drain-source voltage; negative sign retained.
Product status: MP
PRODUCT OVERVIEW
Complementary 30 V N-channel and -30 V P-channel MOSFETs in a common-drain TO-252-4L package. Separate electrical limits and on-resistance values are provided for both channels.
N-channel + P-channel, common drain
N- and P-channel MOSFETs share the drain connection shown on p. 1.
Datasheet p. 130 VRating
N-channel absolute maximum drain-source voltage.
Datasheet p. 1-30 VRating
P-channel absolute maximum drain-source voltage; negative sign retained.
Datasheet p. 129 ARating
N-channel continuous drain current; TA = 25 °C as printed; see thermal limits.
Datasheet p. 1-24 ARating
P-channel continuous drain current; TA = 25 °C as printed; see thermal limits.
Datasheet p. 121 mΩMaximum
N-channel; VGS = 10 V; ID = 14 A; TA = 25 °C.
Datasheet p. 230 mΩMaximum
P-channel; VGS = -10 V; ID = -12 A; TA = 25 °C.
Datasheet p. 3-20 to 20 VRange
Gate-source absolute maximum voltage for both channels.
Datasheet p. 1-55 to 150 °CRange
Junction temperature range for both channels.
Datasheet p. 1Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.
PDF · English · A/1 · 2014-10-20

TO-252-4L
NTS3012T03S4Complementary 30 V N-channel and -30 V P-channel MOSFETs in a common-drain TO-252-4L package. Separate electrical limits and on-resistance values are provided for both channels.
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