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Power bipolar transistors

Bipolar transistors for higher-current switching and drive requirements. Check collector-current and power limits against mounting and temperature, and compare gain and saturation voltage with the specified base drive.

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Power bipolar transistors

Power bipolar transistors

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Power bipolar transistors specifications, including test conditions and datasheet downloads.
PART NUMBERPACKAGEPolarityCollector-emitter voltage, VCEO(V)Continuous collector current, IC(A)Power dissipation (PD)(W)DC current gain, hFECollector-emitter saturation voltage(V)DATASHEET
BCP56-10

Power bipolar transistors

SOT-223NPN
Conditions

Device heading and bipolar connection diagram.

80Rating
Conditions

Collector-emitter absolute maximum rating; TA = 25 °C.

1Rating
Conditions

Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.

1.5Maximum
Conditions

TA = 25 °C; power rating converted from mW to W. Consult mounting and thermal derating.

63 to 160Range
Conditions

VCE = 2 V; IC = 150 mA; TA = 25 °C. Gain group -10 on p. 1 with the test condition on p. 2.

0.5Maximum
Conditions

IC = 500 mA; IB = 50 mA; TA = 25 °C. Signed value retained.

PDF
BCP55-10

Power bipolar transistors

SOT-223NPN
Conditions

Device heading and bipolar connection diagram.

60Rating
Conditions

Collector-emitter absolute maximum rating; TA = 25 °C.

1Rating
Conditions

Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.

1.5Maximum
Conditions

TA = 25 °C; power rating converted from mW to W. Consult mounting and thermal derating.

63 to 160Range
Conditions

VCE = 2 V; IC = 150 mA; TA = 25 °C. Gain group -10 on p. 1 with the test condition on p. 2.

0.5Maximum
Conditions

IC = 500 mA; IB = 50 mA; TA = 25 °C. Signed value retained.

PDF
BCP54-10

Power bipolar transistors

SOT-223NPN
Conditions

Device heading and bipolar connection diagram.

45Rating
Conditions

Collector-emitter absolute maximum rating; TA = 25 °C.

1Rating
Conditions

Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.

1.5Maximum
Conditions

TA = 25 °C; power rating converted from mW to W. Consult mounting and thermal derating.

63 to 160Range
Conditions

VCE = 2 V; IC = 150 mA; TA = 25 °C. Gain group -10 on p. 1 with the test condition on p. 2.

0.5Maximum
Conditions

IC = 500 mA; IB = 50 mA; TA = 25 °C. Signed value retained.

PDF
NH591

Power bipolar transistors

SOT-23PNP
Conditions

Device heading and bipolar connection diagram.

-60Rating
Conditions

Collector-emitter absolute maximum rating; TA = 25 °C.

-1Rating
Conditions

Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.

0.25Maximum
Conditions

TA = 25 °C; power rating converted from mW to W. Consult mounting and thermal derating.

100 to 400Range
Conditions

VCE = -5 V; IC = -500 mA; TA = 25 °C.

-0.3Maximum
Conditions

IC = -500 mA; IB = -50 mA; TA = 25 °C. Signed value retained.

PDF
NH491

Power bipolar transistors

SOT-23NPN
Conditions

Device heading and bipolar connection diagram.

60Rating
Conditions

Collector-emitter absolute maximum rating; TA = 25 °C.

1Rating
Conditions

Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.

0.25Maximum
Conditions

TA = 25 °C; power rating converted from mW to W. Consult mounting and thermal derating.

100 to 300Range
Conditions

VCE = 5 V; IC = 500 mA; TA = 25 °C.

0.25Maximum
Conditions

IC = 500 mA; IB = 50 mA; TA = 25 °C. Signed value retained.

PDF

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