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Schottky bridge rectifiers

Single-phase Schottky barrier bridges. Compare repetitive reverse voltage, current and forward voltage together with their test and thermal conditions. Forward voltage is specified per diode, not across the complete bridge.

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Schottky bridge rectifiers

Schottky bridge rectifiers

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Schottky bridge rectifiers specifications, including test conditions and datasheet downloads.
COMPARE	PART NUMBER	PACKAGE	Bridge configuration	Repetitive peak reverse voltage(V)	Average rectified output current(A)	Non-repetitive surge current(A)	Forward voltage per diode(V)	Reverse leakage current(µA)	DATASHEET
	MB24F Schottky bridge rectifiers	MBF	Single-phase bridge Conditions Four-diode bridge; see connection diagram.	40Maximum Conditions Maximum repetitive peak reverse voltage.	2Maximum Conditions TA = 25 °C unless otherwise stated. Single-phase, half-wave, 60 Hz, resistive or inductive load; derate current by 20% for a capacitive load.	50Maximum Conditions Per diode; 8.3 ms single half sine-wave superimposed on rated load.	0.55Maximum Conditions Per diode; IF = 2 A; TA = 25 °C. Pulse test: 300 µs width, 1% duty cycle.	100Maximum Conditions TA = 25 °C; VR = VRRM.	PDF
	HBS1006P Schottky bridge rectifiers	HBS	Single-phase bridge Conditions Four-diode bridge; see connection diagram.	600Maximum Conditions Maximum repetitive peak reverse voltage.	10Maximum Conditions TA = 25 °C unless otherwise stated. Single-phase, half-wave, 60 Hz, resistive or inductive load; derate current by 20% for a capacitive load.	220Maximum Conditions Per diode; 8.3 ms single half sine-wave superimposed on rated load.	0.88Maximum Conditions Per diode; IF = 5 A; TA = 25 °C. Pulse test: 300 µs width, 1% duty cycle.	5Maximum Conditions TA = 25 °C; VR = VRRM.	PDF
	HBL1506P Schottky bridge rectifiers	HBL	Single-phase bridge Conditions Four-diode bridge; see connection diagram.	600Maximum Conditions Maximum repetitive peak reverse voltage.	15Maximum Conditions TA = 25 °C unless otherwise stated. Single-phase, half-wave, 60 Hz, resistive or inductive load; derate current by 20% for a capacitive load.	330Maximum Conditions Per diode; 8.3 ms single half sine-wave superimposed on rated load.	0.89Maximum Conditions Per diode; IF = 7.5 A; TA = 25 °C. Pulse test: 300 µs width, 1% duty cycle.	5Maximum Conditions TA = 25 °C; VR = VRRM.	PDF
	GBU1006P Schottky bridge rectifiers	GBU	Single-phase bridge Conditions Four-diode bridge; see connection diagram.	600Maximum Conditions Maximum repetitive peak reverse voltage.	10Maximum Conditions With heatsink at 100 °C, as printed in the rating table. Single-phase, half-wave, 60 Hz, resistive or inductive load; derate current by 20% for a capacitive load.	220Maximum Conditions Per diode; 8.3 ms single half sine-wave superimposed on rated load.	0.88Maximum Conditions Per diode; IF = 5 A; TA = 25 °C. Pulse test: 300 µs width, 1% duty cycle.	5Maximum Conditions TA = 25 °C; VR = VRRM.	PDF
	ABS502 Schottky bridge rectifiers	ABS	Single-phase bridge Conditions Four-diode bridge; see connection diagram.	200Maximum Conditions Maximum repetitive peak reverse voltage.	5Maximum Conditions TA = 25 °C unless otherwise stated. Single-phase, half-wave, 60 Hz, resistive or inductive load; derate current by 20% for a capacitive load.	100Maximum Conditions Per diode; 8.3 ms single half sine-wave superimposed on rated load.	0.9Maximum Conditions Per diode; IF = 5 A; TA = 25 °C. Pulse test: 300 µs width, 1% duty cycle.	10Maximum Conditions TA = 25 °C; VR = VRRM.	PDF

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