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Discrete IGBTs

Discrete N-channel IGBTs with an antiparallel fast recovery diode. Compare collector current with its stated temperature condition, saturation voltage at the specified gate drive and collector current, and package thermal limits.

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Discrete IGBTs

Discrete IGBTs

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Discrete IGBTs specifications, including test conditions and datasheet downloads.
COMPARE	PART NUMBER	PACKAGE	Collector-emitter voltage, VCES(V)	Continuous collector current, IC(A)	Collector-emitter saturation voltage(V)	Power dissipation (PD)(W)	Gate-emitter absolute maximum voltage(V)	Junction temperature range(°C)	DATASHEET
	NGT15N65H Discrete IGBTs	ITO-220AB	650Maximum Conditions Collector-emitter voltage rating; gate-emitter voltage = 0 V. See breakdown test on p. 2.	30Rating Conditions Continuous collector current; TA = 25 °C as printed; see pulse, thermal and safe operating limits.	2Maximum Conditions IC = 7.5 A; VGE = 15 V; TJ = 25 °C.	75Maximum Conditions Maximum power dissipation; TA = 25 °C as printed; consult the complete thermal limits.	-30 to 30Range Conditions Gate-emitter absolute maximum voltage.	-50 to 175Range Conditions Operating junction temperature range.	PDF
	NGT15N65C Discrete IGBTs	TO-220C	650Maximum Conditions Collector-emitter voltage rating; gate-emitter voltage = 0 V. See breakdown test on p. 2.	30Rating Conditions Continuous collector current; TA = 25 °C as printed; see pulse, thermal and safe operating limits.	2Maximum Conditions IC = 7.5 A; VGE = 15 V; TJ = 25 °C.	300Maximum Conditions Maximum power dissipation; TA = 25 °C as printed; consult the complete thermal limits.	-30 to 30Range Conditions Gate-emitter absolute maximum voltage.	-50 to 175Range Conditions Operating junction temperature range.	PDF
	NBT6N65S Discrete IGBTs	TO-252	650Maximum Conditions Collector-emitter voltage rating; gate-emitter voltage = 0 V. See breakdown test on p. 2.	12Rating Conditions Continuous collector current; TA = 25 °C as printed; see pulse, thermal and safe operating limits.	2.25Maximum Conditions IC = 3 A; VGE = 15 V; TJ = 25 °C.	57Maximum Conditions Maximum power dissipation; TA = 25 °C as printed; consult the complete thermal limits.	-22 to 22Range Conditions Gate-emitter absolute maximum voltage.	-55 to 150Range Conditions Operating junction temperature range.	PDF
	NBT6N65F Discrete IGBTs	TO-220FP	650Maximum Conditions Collector-emitter voltage rating; gate-emitter voltage = 0 V. See breakdown test on p. 2.	12Rating Conditions Continuous collector current; TA = 25 °C as printed; see pulse, thermal and safe operating limits.	2.25Maximum Conditions IC = 3 A; VGE = 15 V; TJ = 25 °C.	25Maximum Conditions Maximum power dissipation; TA = 25 °C as printed; consult the complete thermal limits.	-22 to 22Range Conditions Gate-emitter absolute maximum voltage.	-55 to 150Range Conditions Operating junction temperature range.	PDF
	NBT6N65D Discrete IGBTs	TO-263	650Maximum Conditions Collector-emitter voltage rating; gate-emitter voltage = 0 V. See breakdown test on p. 2.	12Rating Conditions Continuous collector current; TA = 25 °C as printed; see pulse, thermal and safe operating limits.	2.25Maximum Conditions IC = 3 A; VGE = 15 V; TJ = 25 °C.	69Maximum Conditions Maximum power dissipation; TA = 25 °C as printed; consult the complete thermal limits.	-22 to 22Range Conditions Gate-emitter absolute maximum voltage.	-55 to 150Range Conditions Operating junction temperature range.	PDF

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