TO-263 · Datasheet illustration
Discrete IGBTs
NBT6N65D
650 V N-channel IGBT with an antiparallel fast recovery diode. Maximum collector-emitter saturation voltage is 2.25 V at IC = 3 A and VGE = 15 V.
Collector-emitter voltage, VCES
650 V
Maximum
Conditions
Collector-emitter voltage rating; gate-emitter voltage = 0 V. See breakdown test on p. 2.
Continuous collector current, IC
12 A
Rating
Conditions
Continuous collector current; TA = 25 °C as printed; see pulse, thermal and safe operating limits.
Collector-emitter saturation voltage
2.25 V
Maximum
Conditions
IC = 3 A; VGE = 15 V; TJ = 25 °C.
Product status: MP
PRODUCT OVERVIEW
A closer look at NBT6N65D.
650 V N-channel IGBT with an antiparallel fast recovery diode. Maximum collector-emitter saturation voltage is 2.25 V at IC = 3 A and VGE = 15 V.
- N-channel IGBT
- Antiparallel fast recovery diode
Technical specifications
- Collector-emitter voltage, VCES
650 VMaximum
Collector-emitter voltage rating; gate-emitter voltage = 0 V. See breakdown test on p. 2.
Datasheet p. 1- Continuous collector current, IC
12 ARating
Continuous collector current; TA = 25 °C as printed; see pulse, thermal and safe operating limits.
Datasheet p. 1- Collector-emitter saturation voltage
2.25 VMaximum
IC = 3 A; VGE = 15 V; TJ = 25 °C.
Datasheet p. 2- Power dissipation (PD)
69 WMaximum
Maximum power dissipation; TA = 25 °C as printed; consult the complete thermal limits.
Datasheet p. 1- Gate-emitter absolute maximum voltage
-22 to 22 VRange
Gate-emitter absolute maximum voltage.
Datasheet p. 1- Junction temperature range
-55 to 150 °CRange
Operating junction temperature range.
Datasheet p. 1
Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.
Documents & downloads
NBT6N65D datasheet
PDF · English · A/1 · 2025-10-20