ITO-220AB · Datasheet illustration
Discrete IGBTs
NGT15N65H
650 V N-channel IGBT with an antiparallel fast recovery diode. Maximum collector-emitter saturation voltage is 2 V at IC = 7.5 A and VGE = 15 V.
Collector-emitter voltage, VCES
650 V
Maximum
Conditions
Collector-emitter voltage rating; gate-emitter voltage = 0 V. See breakdown test on p. 2.
Continuous collector current, IC
30 A
Rating
Conditions
Continuous collector current; TA = 25 °C as printed; see pulse, thermal and safe operating limits.
Collector-emitter saturation voltage
2 V
Maximum
Conditions
IC = 7.5 A; VGE = 15 V; TJ = 25 °C.
Product status: MP
PRODUCT OVERVIEW
A closer look at NGT15N65H.
650 V N-channel IGBT with an antiparallel fast recovery diode. Maximum collector-emitter saturation voltage is 2 V at IC = 7.5 A and VGE = 15 V.
- N-channel IGBT
- Antiparallel fast recovery diode
Technical specifications
- Collector-emitter voltage, VCES
650 VMaximum
Collector-emitter voltage rating; gate-emitter voltage = 0 V. See breakdown test on p. 2.
Datasheet p. 1- Continuous collector current, IC
30 ARating
Continuous collector current; TA = 25 °C as printed; see pulse, thermal and safe operating limits.
Datasheet p. 1- Collector-emitter saturation voltage
2 VMaximum
IC = 7.5 A; VGE = 15 V; TJ = 25 °C.
Datasheet p. 2- Power dissipation (PD)
75 WMaximum
Maximum power dissipation; TA = 25 °C as printed; consult the complete thermal limits.
Datasheet p. 1- Gate-emitter absolute maximum voltage
-30 to 30 VRange
Gate-emitter absolute maximum voltage.
Datasheet p. 1- Junction temperature range
-50 to 175 °CRange
Operating junction temperature range.
Datasheet p. 1
Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.
Documents & downloads
NGT15N65H datasheet
PDF · English · A/1 · 2025-10-20