SOT-323 · Datasheet illustration
Small-signal bipolar transistors
NH5551KW
NPN bipolar transistor with 160 V collector-emitter and 0.6 A collector-current ratings. Gain and saturation voltage are listed at their specified test currents.
Polarity
NPN
Conditions
Device heading and bipolar connection diagram.
Collector-emitter voltage, VCEO
160 V
Rating
Conditions
Collector-emitter absolute maximum rating; TA = 25 °C.
Continuous collector current, IC
0.6 A
Rating
Conditions
Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.
Product status: MP
PRODUCT OVERVIEW
A closer look at NH5551KW.
NPN bipolar transistor with 160 V collector-emitter and 0.6 A collector-current ratings. Gain and saturation voltage are listed at their specified test currents.
Technical specifications
- Polarity
NPN
Device heading and bipolar connection diagram.
Datasheet p. 1- Collector-emitter voltage, VCEO
160 VRating
Collector-emitter absolute maximum rating; TA = 25 °C.
Datasheet p. 1- Continuous collector current, IC
0.6 ARating
Collector current absolute maximum rating; TA = 25 °C. Converted from mA where applicable; see thermal and safe operating limits.
Datasheet p. 1- Power dissipation (PD)
0.2 WMaximum
TA = 25 °C; power rating converted from mW to W. Consult mounting and thermal derating.
Datasheet p. 1- DC current gain, hFE
100 to 300 Range
VCE = 5 V; IC = 10 mA; TA = 25 °C.
Datasheet p. 2- Collector-emitter saturation voltage
0.15 VMaximum
IC = 10 mA; IB = 1 mA; TA = 25 °C. Signed value retained.
Datasheet p. 2- Collector-base voltage, VCBO
180 VRating
Collector-base absolute maximum rating; TA = 25 °C.
Datasheet p. 1- Junction temperature range
-55 to 150 °CRange
Junction temperature range.
Datasheet p. 1
Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.
Documents & downloads
NH5551KW datasheet
PDF · English · A/1 · 2014-10-20