TO-252 · Datasheet illustration
SiC diodes
NCD10A65S
650 V silicon carbide Schottky diode with 10 A average forward current at TC = 150 °C. Maximum forward voltage is 1.65 V at 10 A and TA = 25 °C.
Repetitive peak reverse voltage
650 V
Maximum
Conditions
Maximum repetitive peak reverse voltage.
Average rectified output current
10 A
Maximum
Conditions
Average rectified current; TC = 150 °C.
Forward voltage per diode
1.65 V
Maximum
Conditions
IF = 10 A; TA = 25 °C.
Product status: MP
PRODUCT OVERVIEW
A closer look at NCD10A65S.
650 V silicon carbide Schottky diode with 10 A average forward current at TC = 150 °C. Maximum forward voltage is 1.65 V at 10 A and TA = 25 °C.
- Silicon carbide Schottky barrier
Technical specifications
- Repetitive peak reverse voltage
650 VMaximum
Maximum repetitive peak reverse voltage.
Datasheet p. 1- Average rectified output current
10 AMaximum
Average rectified current; TC = 150 °C.
Datasheet p. 1- Forward voltage per diode
1.65 VMaximum
IF = 10 A; TA = 25 °C.
Datasheet p. 1- Non-repetitive surge current
70 AMaximum
10 ms half-sine surge; TC = 25 °C.
Datasheet p. 1- Reverse leakage current
40 µAMaximum
VR = VRRM; TA = 25 °C.
Datasheet p. 1- Junction temperature range
-55 to 175 °CRange
Operating junction temperature range.
Datasheet p. 1
Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.
Documents & downloads
NCD10A65S datasheet
PDF · English · A/1 · 2014-10-20
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