ITO-220AB · Datasheet illustration
SiC MOSFETs
NCH80R060H
800 V N-channel silicon carbide MOSFET. Maximum on-resistance is 80 mΩ at VGS = 18 V and ID = 16.5 A. Refer to the datasheet for gate-drive, thermal and switching limits.
Drain-source voltage (VDS)
800 V
Maximum
Conditions
Drain-source absolute maximum rating.
Continuous drain current (ID)
37 A
Rating
Conditions
Continuous drain current at TA = 25 °C as printed. Pulse width is limited by junction temperature; consult thermal and safe operating limits.
RDS(on) at 18 V, max
80 mΩ
Maximum
Conditions
VGS = 18 V; ID = 16.5 A; TJ = 25 °C. Test condition, not a recommended gate-drive setting.
Product status: MP
PRODUCT OVERVIEW
A closer look at NCH80R060H.
800 V N-channel silicon carbide MOSFET. Maximum on-resistance is 80 mΩ at VGS = 18 V and ID = 16.5 A. Refer to the datasheet for gate-drive, thermal and switching limits.
- Silicon carbide N-channel MOSFET
Technical specifications
- Drain-source voltage (VDS)
800 VMaximum
Drain-source absolute maximum rating.
Datasheet p. 1- Continuous drain current (ID)
37 ARating
Continuous drain current at TA = 25 °C as printed. Pulse width is limited by junction temperature; consult thermal and safe operating limits.
Datasheet p. 1- RDS(on) at 18 V, max
80 mΩMaximum
VGS = 18 V; ID = 16.5 A; TJ = 25 °C. Test condition, not a recommended gate-drive setting.
Datasheet p. 2- Gate-source voltage rating (VGS)
-10 to 22 VRange
Gate-source absolute maximum rating. This differs from the operating gate-drive range.
Datasheet p. 1- Power dissipation (PD)
115 WMaximum
Maximum power dissipation; TA = 25 °C as printed; consult thermal derating.
Datasheet p. 1- Junction temperature range
-55 to 175 °CRange
Operating junction temperature range.
Datasheet p. 1
Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.
Documents & downloads
NCH80R060H datasheet
PDF · English · A/1 · 2025-10-20