TO-247-4L · Datasheet illustration
SiC MOSFETs
NCH120R123PT4
1200 V N-channel silicon carbide MOSFET. Maximum on-resistance is 16 mΩ at VGS = 18 V and ID = 70 A. Refer to the datasheet for gate-drive, thermal and switching limits.
Drain-source voltage (VDS)
1200 V
Maximum
Conditions
Drain-source absolute maximum rating.
Continuous drain current (ID)
156 A
Rating
Conditions
Continuous drain current at TA = 25 °C as printed. Pulse width is limited by junction temperature; consult thermal and safe operating limits.
RDS(on) at 18 V, max
16 mΩ
Maximum
Conditions
VGS = 18 V; ID = 70 A; TJ = 25 °C. Test condition, not a recommended gate-drive setting.
Product status: MP
PRODUCT OVERVIEW
A closer look at NCH120R123PT4.
1200 V N-channel silicon carbide MOSFET. Maximum on-resistance is 16 mΩ at VGS = 18 V and ID = 70 A. Refer to the datasheet for gate-drive, thermal and switching limits.
- Silicon carbide N-channel MOSFET
- Separate Kelvin source terminal
Technical specifications
- Drain-source voltage (VDS)
1200 VMaximum
Drain-source absolute maximum rating.
Datasheet p. 1- Continuous drain current (ID)
156 ARating
Continuous drain current at TA = 25 °C as printed. Pulse width is limited by junction temperature; consult thermal and safe operating limits.
Datasheet p. 1- RDS(on) at 18 V, max
16 mΩMaximum
VGS = 18 V; ID = 70 A; TJ = 25 °C. Test condition, not a recommended gate-drive setting.
Datasheet p. 2- Gate-source voltage rating (VGS)
-10 to 22 VRange
Gate-source absolute maximum rating. This differs from the operating gate-drive range.
Datasheet p. 1- Power dissipation (PD)
577 WMaximum
Maximum power dissipation; TA = 25 °C as printed; consult thermal derating.
Datasheet p. 1- Junction temperature range
-55 to 175 °CRange
Operating junction temperature range.
Datasheet p. 1
Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.
Documents & downloads
NCH120R123PT4 datasheet
PDF · English · A/1 · 2025-10-20