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DC POWER CONVERSION

DC/DC conversion

Review switching devices, rectification and optional linear post-regulation against the input range, load and thermal requirements of a DC power design.

Explore component selection

FUNCTIONAL OVERVIEW

  1. 01

    DC input

    Operating range & transients

    followed by
  2. 02

    Switching stage

    MOSFET, gate drive & topology

    followed by
  3. 03

    Regulated output

    Load range & thermal evaluation

Functional overview of a converter. Inductors, capacitors, control and protection circuits are omitted.

APPLICATION OVERVIEW

Understand the circuit requirements.

DC/DC conversion adapts one DC voltage to another. The topology, input range, load current and control scheme determine how the switching devices are used.

A part number's voltage and current ratings are only the start. Gate drive, on-resistance conditions, switching characteristics and board-level thermal behavior all belong in the selection brief.

DESIGN CONSIDERATIONS

The details behind component selection.

01

Voltage margin

Review the maximum drain-source voltage, including switching overshoot and input transients, against the VDS rating.

02

Gate-drive conditions

Use RDS(on) values measured at a gate voltage relevant to the design. Gate threshold voltage describes the onset of conduction, not the fully enhanced on-state.

03

Conduction & switching

Consider conduction losses alongside gate charge and switching behavior. Compare values only with their measurement conditions in view.

04

Package & thermal path

Review pinout, footprint, mounting conditions and the available heat path. Datasheet current ratings do not automatically describe the current a finished PCB can sustain.

COMPONENT SELECTION

A starting point for your design.

Compare low- and medium-voltage MOSFETs against the actual switch voltage and gate drive. Schottky rectifiers may be relevant to an asynchronous stage; an LDO may be evaluated separately for a lower-noise auxiliary or post-regulated rail. These are different circuit functions, and the linked devices are starting points for datasheet review.

PDFN5*6 package

PDFN5*6

NTS036N03P5

30 V N-channel enhancement-mode trench MOSFET in a PDFN5*6 package, with a 112 A drain-current rating under the datasheet conditions. On-resistance values below retain their gate-drive and test-current conditions.

TO-220C package

TO-220C

NTH084N06C

60 V N-channel enhancement-mode trench MOSFET in a TO-220C package, with a 73 A drain-current rating under the datasheet conditions. On-resistance values below retain their gate-drive and test-current conditions.

TO-263 package

TO-263

NTS096N08D

80 V N-channel enhancement-mode trench MOSFET in a TO-263 package, with a 96 A drain-current rating under the datasheet conditions. On-resistance values below retain their gate-drive and test-current conditions.

CONTINUE EXPLORING

Related application topics.

LET'S DISCUSS YOUR APPLICATION

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