Skip to content

Find a product

Type a part number or package to search the catalog.

Browse the full catalog
PACKAGE VIEWTO-220C package illustration

TO-220C · Datasheet illustration

Low-voltage MOSFETs

NTH084N06C

60 V N-channel enhancement-mode trench MOSFET in a TO-220C package, with a 73 A drain-current rating under the datasheet conditions. On-resistance values below retain their gate-drive and test-current conditions.

Drain-source voltage (VDS)

60 V

Rating

Conditions

Absolute maximum drain-source voltage; TA = 25 °C unless otherwise specified.

Continuous drain current (ID)

73 A

Rating

Conditions

TA = 25 °C, as stated in the absolute maximum ratings table. Note 1: pulse width limited by maximum junction temperature; see datasheet derating and SOA.

RDS(on), max, |VGS| = 10 V

8.4 mΩ

Maximum

Conditions

VGS = 10 V; ID = 20 A; TA = 25 °C.

Product status: MP

PRODUCT OVERVIEW

A closer look at NTH084N06C.

60 V N-channel enhancement-mode trench MOSFET in a TO-220C package, with a 73 A drain-current rating under the datasheet conditions. On-resistance values below retain their gate-drive and test-current conditions.

  • Enhancement-mode trench MOSFET
  • Single-channel device
  • On-resistance specified at multiple gate-drive voltages

Technical specifications

Channel

N-channel

Enhancement-mode trench MOSFET; single device.

Datasheet p. 1
Drain-source voltage (VDS)

60 VRating

Absolute maximum drain-source voltage; TA = 25 °C unless otherwise specified.

Datasheet p. 1
Continuous drain current (ID)

73 ARating

TA = 25 °C, as stated in the absolute maximum ratings table. Note 1: pulse width limited by maximum junction temperature; see datasheet derating and SOA.

Datasheet p. 1
RDS(on), max, |VGS| = 10 V

8.4 mΩMaximum

VGS = 10 V; ID = 20 A; TA = 25 °C.

Datasheet p. 2
RDS(on), max, |VGS| = 4.5 V

12.6 mΩMaximum

VGS = 4.5 V; ID = 20 A; TA = 25 °C.

Datasheet p. 2
Gate-source voltage rating (VGS)

-20 to 20 VRange

Absolute maximum gate-source voltage.

Datasheet p. 1
Gate threshold voltage (VGS(th))

2 to 4 VRange

VGS = VDS; ID = 250 µA; TA = 25 °C.

Datasheet p. 2
Total gate charge (Qg)

61 nCTypical

VDS = 30 V; VGS = 10 V; ID = 20 A; TA = 25 °C.

Datasheet p. 2
Power dissipation (PD)

107 WMaximum

TA = 25 °C, as stated in the absolute maximum ratings table; see thermal conditions and derating in the datasheet.

Datasheet p. 1
Junction temperature range

-55 to 175 °CRange

Operating junction temperature.

Datasheet p. 1

Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.

Documents & downloads

NTH084N06C datasheet

PDF · English · A/1 · 2014-10-20

Typical applications

  • DC–DC converters
  • Battery management systems
  • Control circuits
  • Uninterruptible power supplies

Application selection guides

Explore the circuit requirements for this component family and evaluate the device against your design conditions.

LET'S DISCUSS YOUR APPLICATION

Find the right starting point.

Explore the catalog or share your component requirements.

Contact our team