TO-252
NTS074N03S30 V N-channel enhancement-mode trench MOSFET in a TO-252 package, with a 50 A drain-current rating under the datasheet conditions. On-resistance values below retain their gate-drive and test-current conditions.
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PACKAGE VIEW
TO-252 · Datasheet illustration
Low-voltage MOSFETs
NTS130P08S
-80 V P-channel enhancement-mode trench MOSFET in a TO-252 package, with a -56 A drain-current rating under the datasheet conditions. On-resistance values below retain their gate-drive and test-current conditions.
Drain-source voltage (VDS)
-80 V
Rating
Conditions
Absolute maximum drain-source voltage; TA = 25 °C unless otherwise specified.
Continuous drain current (ID)
-56 A
Rating
Conditions
TA = 25 °C, as stated in the absolute maximum ratings table. Note 1: pulse width limited by maximum junction temperature; see datasheet derating and SOA.
RDS(on), max, |VGS| = 10 V
18 mΩ
Maximum
Conditions
VGS = -10 V; ID = -28 A; TA = 25 °C.
Product status: MP
PRODUCT OVERVIEW
A closer look at NTS130P08S.
-80 V P-channel enhancement-mode trench MOSFET in a TO-252 package, with a -56 A drain-current rating under the datasheet conditions. On-resistance values below retain their gate-drive and test-current conditions.
- Enhancement-mode trench MOSFET
- Single-channel device
- On-resistance specified at multiple gate-drive voltages
Technical specifications
- Channel
P-channel
Enhancement-mode trench MOSFET; single device.
Datasheet p. 1- Drain-source voltage (VDS)
-80 VRating
Absolute maximum drain-source voltage; TA = 25 °C unless otherwise specified.
Datasheet p. 1- Continuous drain current (ID)
-56 ARating
TA = 25 °C, as stated in the absolute maximum ratings table. Note 1: pulse width limited by maximum junction temperature; see datasheet derating and SOA.
Datasheet p. 1- RDS(on), max, |VGS| = 10 V
18 mΩMaximum
VGS = -10 V; ID = -28 A; TA = 25 °C.
Datasheet p. 2- RDS(on), max, |VGS| = 4.5 V
21 mΩMaximum
VGS = -4.5 V; ID = -28 A; TA = 25 °C.
Datasheet p. 2- Gate-source voltage rating (VGS)
-20 to 20 VRange
Absolute maximum gate-source voltage.
Datasheet p. 1- Gate threshold voltage (VGS(th))
-2.4 to -1.1 VRange
VGS = VDS; ID = -250 µA; TA = 25 °C. Datasheet column labels: Min = -1.1 V; Max = -2.4 V. Range displayed in numerical order.
Datasheet p. 2- Total gate charge (Qg)
190 nCTypical
VDS = -40 V; VGS = -10 V; ID = -28 A; TA = 25 °C.
Datasheet p. 2- Power dissipation (PD)
104 WMaximum
TA = 25 °C, as stated in the absolute maximum ratings table; see thermal conditions and derating in the datasheet.
Datasheet p. 1- Junction temperature range
-55 to 150 °CRange
Operating junction temperature.
Datasheet p. 1
Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.
Documents & downloads
NTS130P08S datasheet
PDF · English · A/1 · 2014-10-20
Typical applications
- DC–DC converters
- Battery management systems
- Control circuits
- Uninterruptible power supplies
Application selection guides
Explore the circuit requirements for this component family and evaluate the device against your design conditions.
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