TO-252
NTS130P08S-80 V P-channel enhancement-mode trench MOSFET in a TO-252 package, with a -56 A drain-current rating under the datasheet conditions. On-resistance values below retain their gate-drive and test-current conditions.
-80 VView product
PACKAGE VIEW
TO-252 · Datasheet illustration
Low-voltage MOSFETs
NTL050N02S
20 V N-channel enhancement-mode trench MOSFET in a TO-252 package, with a 60 A drain-current rating under the datasheet conditions. On-resistance values below retain their gate-drive and test-current conditions.
Drain-source voltage (VDS)
20 V
Rating
Conditions
Absolute maximum drain-source voltage; TA = 25 °C unless otherwise specified.
Continuous drain current (ID)
60 A
Rating
Conditions
TA = 25 °C, as stated in the absolute maximum ratings table. Note 1: pulse width limited by maximum junction temperature; see datasheet derating and SOA.
RDS(on), max, |VGS| = 4.5 V
7 mΩ
Maximum
Conditions
VGS = 4.5 V; ID = 20 A; TA = 25 °C.
Product status: MP
PRODUCT OVERVIEW
A closer look at NTL050N02S.
20 V N-channel enhancement-mode trench MOSFET in a TO-252 package, with a 60 A drain-current rating under the datasheet conditions. On-resistance values below retain their gate-drive and test-current conditions.
- Enhancement-mode trench MOSFET
- Single-channel device
- On-resistance specified at multiple gate-drive voltages
Technical specifications
- Channel
N-channel
Enhancement-mode trench MOSFET; single device.
Datasheet p. 1- Drain-source voltage (VDS)
20 VRating
Absolute maximum drain-source voltage; TA = 25 °C unless otherwise specified.
Datasheet p. 1- Continuous drain current (ID)
60 ARating
TA = 25 °C, as stated in the absolute maximum ratings table. Note 1: pulse width limited by maximum junction temperature; see datasheet derating and SOA.
Datasheet p. 1- RDS(on), max, |VGS| = 4.5 V
7 mΩMaximum
VGS = 4.5 V; ID = 20 A; TA = 25 °C.
Datasheet p. 2- RDS(on), max, |VGS| = 2.5 V
11 mΩMaximum
VGS = 2.5 V; ID = 20 A; TA = 25 °C.
Datasheet p. 2- Gate-source voltage rating (VGS)
-12 to 12 VRange
Absolute maximum gate-source voltage.
Datasheet p. 1- Gate threshold voltage (VGS(th))
0.5 to 0.9 VRange
VGS = VDS; ID = 250 µA; TA = 25 °C.
Datasheet p. 2- Total gate charge (Qg)
23 nCTypical
VDS = 10 V; VGS = 4.5 V; ID = 20 A; TA = 25 °C.
Datasheet p. 2- Power dissipation (PD)
39 WMaximum
TA = 25 °C, as stated in the absolute maximum ratings table; see thermal conditions and derating in the datasheet.
Datasheet p. 1- Junction temperature range
-55 to 150 °CRange
Operating junction temperature.
Datasheet p. 1
Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.
Documents & downloads
NTL050N02S datasheet
PDF · English · A/1 · 2014-10-20
Typical applications
- DC–DC converters
- Battery management systems
- Control circuits
- Uninterruptible power supplies
Application selection guides
Explore the circuit requirements for this component family and evaluate the device against your design conditions.
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