TO-252 · Datasheet illustration
High-voltage MOSFETs
NJH65R360S
650 V N-channel super junction MOSFET in a TO-252 package, with a 11 A drain-current rating under the datasheet conditions. Maximum on-resistance is specified separately at each gate-drive voltage.
Drain-source voltage (VDS)
650 V
Rating
Conditions
Absolute maximum drain-source voltage; TA = 25 °C unless otherwise specified.
Continuous drain current (ID)
11 A
Rating
Conditions
TA = 25 °C, as printed in the absolute maximum ratings table. Note 1: pulse width limited by maximum junction temperature; see the datasheet derating curves and safe operating area.
RDS(on), max, |VGS| = 10 V
360 mΩ
Maximum
Conditions
VGS = 10 V; ID = 5.5 A; TA = 25 °C.
Product status: MP
PRODUCT OVERVIEW
A closer look at NJH65R360S.
650 V N-channel super junction MOSFET in a TO-252 package, with a 11 A drain-current rating under the datasheet conditions. Maximum on-resistance is specified separately at each gate-drive voltage.
- Super junction technology
- N-channel enhancement-mode device
- Maximum on-resistance specified at multiple gate-drive voltages
Technical specifications
- Channel
N-channel
N-channel enhancement-mode MOSFET; single device.
Datasheet p. 1- MOSFET technology
Super junction
Technology identified in the p. 1 device heading and features.
Datasheet p. 1- Drain-source voltage (VDS)
650 VRating
Absolute maximum drain-source voltage; TA = 25 °C unless otherwise specified.
Datasheet p. 1- Continuous drain current (ID)
11 ARating
TA = 25 °C, as printed in the absolute maximum ratings table. Note 1: pulse width limited by maximum junction temperature; see the datasheet derating curves and safe operating area.
Datasheet p. 1- RDS(on), max, |VGS| = 10 V
360 mΩMaximum
VGS = 10 V; ID = 5.5 A; TA = 25 °C.
Datasheet p. 2- RDS(on), max, |VGS| = 4.5 V
540 mΩMaximum
VGS = 4.5 V; ID = 5.5 A; TA = 25 °C.
Datasheet p. 2- Gate-source voltage rating (VGS)
-30 to 30 VRange
Absolute maximum gate-source voltage.
Datasheet p. 1- Gate threshold voltage (VGS(th))
2.8 to 4.2 VRange
VGS = VDS; ID = 250 µA; TA = 25 °C.
Datasheet p. 2- Total gate charge (Qg)
16 nCTypical
VDS = 325 V; VGS = 10 V; ID = 5.5 A; TA = 25 °C.
Datasheet p. 2- Power dissipation (PD)
87 WMaximum
TA = 25 °C, as printed in the absolute maximum ratings table; see the datasheet thermal conditions and derating.
Datasheet p. 1- Junction temperature range
-55 to 150 °CRange
Operating junction temperature range.
Datasheet p. 1
Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.
Documents & downloads
NJH65R360S datasheet
PDF · English · A/1 · 2014-10-20
Typical applications
- Power factor correction
- UPS and micro-inverter systems
- LED and monitor power supplies
Application selection guides
Explore the circuit requirements for this component family and evaluate the device against your design conditions.