
TO-220AB · Datasheet illustration
Medium-voltage MOSFETs
NSH035N15AB
150 V N-channel shielded gate trench MOSFET in a TO-220AB package, with a 188 A drain-current rating under the datasheet conditions. Maximum on-resistance is specified separately at each gate-drive voltage.
Drain-source voltage (VDS)
150 V
Rating
Conditions
Absolute maximum drain-source voltage; TA = 25 °C unless otherwise specified.
Continuous drain current (ID)
188 A
Rating
Conditions
TA = 25 °C, as printed in the absolute maximum ratings table. Note 1: pulse width limited by maximum junction temperature; see the datasheet derating curves and safe operating area.
RDS(on), max, |VGS| = 10 V
4.9 mΩ
Maximum
Conditions
VGS = 10 V; ID = 20 A; TA = 25 °C.
Product status: MP
PRODUCT OVERVIEW
A closer look at NSH035N15AB.
150 V N-channel shielded gate trench MOSFET in a TO-220AB package, with a 188 A drain-current rating under the datasheet conditions. Maximum on-resistance is specified separately at each gate-drive voltage.
- Shielded gate trench technology
- N-channel enhancement-mode device
- Maximum on-resistance specified at multiple gate-drive voltages
Technical specifications
- Channel
N-channel
N-channel enhancement-mode MOSFET; single device.
Datasheet p. 1- MOSFET technology
Shielded gate trench
Technology identified in the p. 1 device heading and features.
Datasheet p. 1- Drain-source voltage (VDS)
150 VRating
Absolute maximum drain-source voltage; TA = 25 °C unless otherwise specified.
Datasheet p. 1- Continuous drain current (ID)
188 ARating
TA = 25 °C, as printed in the absolute maximum ratings table. Note 1: pulse width limited by maximum junction temperature; see the datasheet derating curves and safe operating area.
Datasheet p. 1- RDS(on), max, |VGS| = 10 V
4.9 mΩMaximum
VGS = 10 V; ID = 20 A; TA = 25 °C.
Datasheet p. 2- RDS(on), max, |VGS| = 5 V
7.4 mΩMaximum
VGS = 5 V; ID = 20 A; TA = 25 °C.
Datasheet p. 2- Gate-source voltage rating (VGS)
-20 to 20 VRange
Absolute maximum gate-source voltage.
Datasheet p. 1- Gate threshold voltage (VGS(th))
2 to 4 VRange
VGS = VDS; ID = 250 µA; TA = 25 °C.
Datasheet p. 2- Total gate charge (Qg)
73 nCTypical
VDS = 50 V; VGS = 10 V; ID = 20 A; TA = 25 °C.
Datasheet p. 2- Power dissipation (PD)
429 WMaximum
TA = 25 °C, as printed in the absolute maximum ratings table; see the datasheet thermal conditions and derating.
Datasheet p. 1- Junction temperature range
-55 to 175 °CRange
Operating junction temperature range.
Datasheet p. 1
Values apply under their stated conditions. The datasheet includes the complete ratings, curves and package information.
Documents & downloads
NSH035N15AB datasheet
PDF · English · A/1 · 2014-10-20
Typical applications
- Synchronous rectification
- High-frequency circuits
- Motor drives
Application selection guides
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